Volume pricing
- 1+ pcs$0.39
- 10+ pcs$0.37
- 100+ pcs$0.35
- 500+ pcs$0.33
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 3.1mm
- Drainsource On Resistancemax
- 0.04Ohm
- Vgs Max
- ±20V
- Parça Durumu
- Active
- Element Configuration
- Single
- RoHS Durumu
- ROHS3 Compliant
- Fet Type
- N-Channel
- Number Of Elements
- 1
- Number Of Channels
- 1
- Drain To Source Voltage Vdss
- 30V
- Fabrika Tedarik Süresi
- 16 Weeks
- JESD-609 Kodu
- e3
- Terminal Formu
- GULL WING
- Pin Sayısı
- 59
- Vgsth Max Id
- 2.1V @ 250μA
- Ds Breakdown Voltagemin
- 30V
- Turn Off Delay Time
- 4.4 ns
- Montaj
- Surface Mount
- Radyasyon Dayanımı
- No
- Terminal Kaplaması
- Matte Tin (Sn)
- Yayın Yılı
- 2010
- Additional Feature
- HIGH RELIABILITY
- Rds On Max Id Vgs
- 40m Ω @ 4.2A, 10V
- Terminal Sayısı
- 3
- Power Dissipation Max
- 780mW Ta
- Yükseklik
- 1.3mm
- Gate Charge Qg Max Vgs
- 13.2nC @ 10V
- Genişlik
- 1.7mm
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Continuous Drain Current Id
- 4.2A
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Jesd30 Code
- R-PDSO-G3
- Weight
- 7.994566mg
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fall Time Typ
- 4.1 ns
- Turn On Delay Time
- 4.3 ns
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 20.1ns
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