DMN3065LW-7

Specifications

Input Capacitance Ciss Max Vds

465pF @ 15V

Rds On Max Id Vgs

52m Ω @ 4A, 10V

Terminal Sayısı

3

Terminal Pozisyonu

DUAL

Current Continuous Drain Id25

4A Ta

Rise Time

1.6ns

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2014

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Turn On Delay Time

1.9 ns

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

12V

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

770mW Ta

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Surface Mount

Turn Off Delay Time

10.3 ns

Fall Time Typ

2 ns

Terminal Kaplaması

Matte Tin (Sn)

Drain Currentmax Abs Id

4A

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

22 Weeks

Drain To Source Voltage Vdss

30V

Number Of Elements

1

Number Of Channels

1

Ds Breakdown Voltagemin

30V

Vgsth Max Id

1.5V @ 250μA

Temel Parça No

DMN3065

Terminal Formu

GULL WING

JESD-609 Kodu

e3

Element Configuration

Single

Parça Durumu

Active

Vgs Max

±12V

Drainsource On Resistancemax

0.052Ohm

Kılıf / Paket

SC-70, SOT-323

Gate Charge Qg Max Vgs

11.7nC @ 10V

Weight

6.010099mg

Fet Type

N-Channel