DMN3042L-7

Specifications

Vgsth Max Id

1.4V @ 250μA

Ds Breakdown Voltagemin

30V

Terminal Formu

GULL WING

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

30V

Fabrika Tedarik Süresi

23 Weeks

Jesd30 Code

R-PDSO-G3

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Continuous Drain Current Id

5.8A

Feedback Capmax Crss

80 pF

Drive Voltage Max Rds On Min Rds On

2.5V 10V

Drainsource On Resistancemax

0.0265Ohm

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Active

Vgs Max

±12V

Gate Charge Qg Max Vgs

20nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Power Dissipation Max

720mW Ta

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

5.8A Ta

Terminal Pozisyonu

DUAL

Terminal Sayısı

3

Rds On Max Id Vgs

26.5m Ω @ 5.8A, 10V

Input Capacitance Ciss Max Vds

860pF @ 15V

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2015

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

Matte Tin (Sn)

Montaj

Surface Mount