Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- ECCN Kodu
- EAR99
- Terminal Pozisyonu
- DUAL
- Tepe Reflow Süresi (maks. sn)
- 40
- Genişlik
- 1.6mm
- Uzunluk
- 3mm
- Montaj
- Surface Mount
- Power Dissipation
- 2W
- Yayın Yılı
- 2009
- Vgsth Max Id
- 2.1V @ 250μA
- Turn On Delay Time
- 11 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Contact Plating
- Tin
- Number Of Elements
- 1
- Transistor Element Material
- SILICON
- Fall Time Typ
- 30 ns
- Gate To Source Voltage Vgs
- 20V
- Fet Type
- N-Channel
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Radyasyon Dayanımı
- No
- Additional Feature
- HIGH RELIABILITY
- Power Dissipation Max
- 2W Ta
- Yükseklik
- 1.1mm
- Vgs Max
- ±20V
- Kılıf / Paket
- SOT-23-6
- Ambalaj
- Tape & Reel (TR)
- Reach Svhc
- No SVHC
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Breakdown Voltage
- 30V
- Current Continuous Drain Id25
- 6.9A Ta
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 7ns
- Drainsource On Resistancemax
- 0.033Ohm
- Pin Sayısı
- 6
- Input Capacitance Ciss Max Vds
- 755pF @ 10V
- Pulsed Drain Currentmax Idm
- 20A
- Number Of Channels
- 1
- Continuous Drain Current Id
- 6.9A
- Gate Charge Qg Max Vgs
- 13nC @ 10V
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