DMN3026LVT-7

Specifications

Number Of Elements

1

Transistor Element Material

SILICON

Continuous Drain Current Id

6.6A

Fall Time Typ

3 ns

Element Configuration

Single

Rise Time

2.5ns

Drainsource On Resistancemax

0.023Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Channels

1

Input Capacitance Ciss Max Vds

643pF @ 15V

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2014

Turn On Delay Time

2.2 ns

Vgsth Max Id

2V @ 250μA

Montaj

Surface Mount

Drain To Source Breakdown Voltage

30V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

30

Terminal Pozisyonu

DUAL

Kapasitans

643pF

Jesd30 Code

R-PDSO-G6

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

6.6A Ta

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Vgs Max

±20V

Turn Off Delay Time

12.1 ns

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

23m Ω @ 6.5A, 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Power Dissipation Max

1.2W Ta

Montaj Tipi

Surface Mount

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

260

Gate To Source Voltage Vgs

20V

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

12.5nC @ 10V

Fet Type

N-Channel