Volume pricing
- 1+ pcs$0.55
- 10+ pcs$0.52
- 100+ pcs$0.49
- 500+ pcs$0.46
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Additional Feature
- HIGH RELIABILITY
- Power Dissipation Max
- 900mW Ta
- Vgs Max
- ±25V
- Kılıf / Paket
- 8-PowerVDFN
- Ambalaj
- Tape & Reel (TR)
- Reach Svhc
- No SVHC
- Terminal Kaplaması
- Matte Tin (Sn)
- Gate To Source Voltage Vgs
- 25V
- Fet Type
- N-Channel
- Radyasyon Dayanımı
- No
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Fall Time Typ
- 3.1 ns
- Number Of Elements
- 1
- Weight
- 72.007789mg
- Terminal Pozisyonu
- DUAL
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- 40
- Transistor Application
- SWITCHING
- Montaj
- Surface Mount
- Vgsth Max Id
- 2.4V @ 250μA
- Turn On Delay Time
- 2.9 ns
- Yayın Yılı
- 2012
- Drain Currentmax Abs Id
- 6.3A
- Rds On Max Id Vgs
- 23m Ω @ 10A, 10V
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Parça Durumu
- Active
- Montaj Tipi
- Surface Mount
- Turn Off Delay Time
- 14.6 ns
- JESD-609 Kodu
- e3
- Gate Charge Qg Max Vgs
- 10.5nC @ 10V
- Pin Sayısı
- 8
- Terminal Sayısı
- 5
- Fabrika Tedarik Süresi
- 6 Weeks
- Tepe Reflow Sıcaklığı (°C)
- 260
- Drainsource On Resistancemax
- 0.023Ohm
- Rise Time
- 7.9ns
- Pin Sayısı
- 8
- Input Capacitance Ciss Max Vds
- 479pF @ 15V
- Number Of Channels
- 1
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