DMN3016LSS-13

Specifications

Power Dissipation Max

1.5W Ta

Rds On Max Id Vgs

12m Ω @ 12A, 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Additional Feature

HIGH RELIABILITY

Montaj Tipi

Surface Mount

Parça Durumu

Active

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Vgs Max

±20V

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Pin Sayısı

8

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

25.1nC @ 10V

Terminal Formu

GULL WING

Fet Type

N-Channel

Terminal Sayısı

8

Avalanche Energy Rating Eas

25 mJ

Fabrika Tedarik Süresi

23 Weeks

Reference Standard

AEC-Q101

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.012Ohm

Input Capacitance Ciss Max Vds

1415pF @ 15V

Continuous Drain Current Id

10.3A

Transistor Element Material

SILICON

Number Of Elements

1

Ds Breakdown Voltagemin

30V

Drain To Source Voltage Vdss

30V

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

10.3A Ta

Vgsth Max Id

2.5V @ 250μA

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2008

Drain Currentmax Abs Id

9.3A