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DMN3016LFDF-7

Diodes Incorporated

DMN3016LFDF-7

Single MOSFETs Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.66
  • 10+ pcs$0.62
  • 100+ pcs$0.59
  • 500+ pcs$0.55

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Additional Feature
HIGH RELIABILITY
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Rds On Max Id Vgs
12m Ω @ 11A, 10V
Power Dissipation Max
2.02W Ta
Parça Durumu
Active
Montaj Tipi
Surface Mount
Vgs Max
±20V
Kılıf / Paket
6-UDFN Exposed Pad
Ambalaj
Tape & Reel (TR)
JESD-609 Kodu
e4
Gate Charge Qg Max Vgs
25.1nC @ 10V
Terminal Kaplaması
Nickel/Palladium/Gold (Ni/Pd/Au)
Yüzey Montaj
YES
Fabrika Tedarik Süresi
22 Weeks
Reference Standard
AEC-Q101
Terminal Sayısı
6
Fet Type
N-Channel
Terminal Formu
NO LEAD
Configuration
SINGLE WITH BUILT-IN DIODE
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Drainsource On Resistancemax
0.012Ohm
Nem Hassasiyeti (MSL)
1 (Unlimited)
Input Capacitance Ciss Max Vds
1415pF @ 15V
Ds Breakdown Voltagemin
30V
Number Of Elements
1
Case Connection
DRAIN
Transistor Element Material
SILICON
Operating Mode
ENHANCEMENT MODE
ECCN Kodu
EAR99
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Terminal Pozisyonu
DUAL
Transistor Application
SWITCHING
Drain To Source Voltage Vdss
30V
Current Continuous Drain Id25
12A Ta
Jesd30 Code
S-PDSO-N6
RoHS Durumu
ROHS3 Compliant
Drain Currentmax Abs Id
10A
Yayın Yılı
2016
Çalışma Sıcaklığı
-55°C~150°C TJ
Vgsth Max Id
2V @ 250μA

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