DMN26D0UFB4-7

Specifications

Yükseklik

350μm

Power Dissipation Max

350mW Ta

Additional Feature

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

Reach Svhc

No SVHC

Ambalaj

Digi-Reel®

Kılıf / Paket

3-XFDFN

Vgs Max

±10V

Fet Type

N-Channel

Gate To Source Voltage Vgs

10V

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Radyasyon Dayanımı

No

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Fall Time Typ

15.2 ns

Transistor Element Material

SILICON

Uzunluk

1.05mm

Genişlik

650μm

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

40

Terminal Pozisyonu

BOTTOM

ECCN Kodu

EAR99

Yayın Yılı

2017

Drain Currentmax Abs Id

0.24A

Turn On Delay Time

3.8 ns

Vgsth Max Id

1.1V @ 250μA

Montaj

Surface Mount

Power Dissipation

350mW

Montaj Tipi

Surface Mount

Parça Durumu

Active

Rds On Max Id Vgs

3 Ω @ 100mA, 4.5V

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Kurşunsuz

Lead Free

JESD-609 Kodu

e4

Turn Off Delay Time

13.4 ns

Fabrika Tedarik Süresi

18 Weeks

Terminal Sayısı

3

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

260

Number Of Channels

1

Input Capacitance Ciss Max Vds

14.1pF @ 15V