DMN24H3D5L-7

Specifications

Input Capacitance Ciss Max Vds

188pF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Continuous Drain Current Id

480mA

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

240V

Jesd30 Code

R-PDSO-G3

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

480mA Ta

Drain To Source Voltage Vdss

240V

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

30

Terminal Pozisyonu

DUAL

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Drain Currentmax Abs Id

0.48A

Yayın Yılı

2015

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

2.5V @ 250μA

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Parça Durumu

Active

Power Dissipation Max

760mW Ta

Drive Voltage Max Rds On Min Rds On

3.3V 10V

Rds On Max Id Vgs

3.5 Ω @ 300mA, 10V

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Vgs Max

±20V

Fet Type

N-Channel

Terminal Formu

GULL WING

Fabrika Tedarik Süresi

22 Weeks

Terminal Sayısı

3

Gate Charge Qg Max Vgs

6.6nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)

Tepe Reflow Sıcaklığı (°C)

260

Configuration

SINGLE WITH BUILT-IN DIODE