DMN2300UFD-7

Specifications

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

40

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

20V

Current Continuous Drain Id25

1.21A Ta

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Turn On Delay Time

4.92 ns

Vgsth Max Id

950mV @ 250μA

Yayın Yılı

2011

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.2Ohm

Rise Time

6.93ns

Pin Sayısı

3

Input Capacitance Ciss Max Vds

67.62pF @ 25V

Number Of Channels

1

Ds Breakdown Voltagemin

20V

Transistor Element Material

SILICON

Continuous Drain Current Id

1.73A

Fall Time Typ

10.62 ns

Number Of Elements

1

Element Configuration

Single

Gate Charge Qg Max Vgs

2nC @ 4.5V

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Gate To Source Voltage Vgs

8V

Pin Sayısı

3

Terminal Sayısı

3

Fabrika Tedarik Süresi

17 Weeks

Fet Type

N-Channel

Tepe Reflow Sıcaklığı (°C)

260

Radyasyon Dayanımı

No

Additional Feature

LOW THRESHOLD

Power Dissipation Max

470mW Ta

Rds On Max Id Vgs

200m Ω @ 900mA, 4.5V

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Parça Durumu

Active