DMN2300UFB4-7B

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Transistor Element Material

SILICON

Fall Time Typ

13 ns

Uzunluk

1.05mm

Tepe Reflow Süresi (maks. sn)

40

Terminal Pozisyonu

BOTTOM

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Genişlik

650μm

Montaj

Surface Mount

Power Dissipation

500mW

Yayın Yılı

2012

Turn On Delay Time

3.5 ns

Vgsth Max Id

950mV @ 250μA

Yükseklik

400μm

Additional Feature

HIGH RELIABILITY, LOW THRESHOLD

Power Dissipation Max

500mW Ta

Ambalaj

Tape & Reel (TR)

Reach Svhc

No SVHC

Vgs Max

±8V

Kılıf / Paket

3-XFDFN

Fet Type

N-Channel

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Gate To Source Voltage Vgs

8V

Radyasyon Dayanımı

No

Input Capacitance Ciss Max Vds

64.3pF @ 25V

Number Of Channels

1

Rise Time

2.8ns

Threshold Voltage

950mV

Pin Sayısı

3

Element Configuration

Single

Continuous Drain Current Id

1.3A

Case Connection

DRAIN

Current Continuous Drain Id25

1.3A Ta

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

20V

Çalışma Sıcaklığı

-55°C~150°C TJ