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Same-day dispatch from stock
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RoHS
Compliant
Support
Technical team support
Specifications
- Vgs Max
- ±12V
- Kılıf / Paket
- 3-UFDFN
- Ambalaj
- Tape & Reel (TR)
- Reach Svhc
- No SVHC
- Additional Feature
- HIGH RELIABILITY
- Power Dissipation Max
- 380mW Ta
- Yükseklik
- 480μm
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Radyasyon Dayanımı
- No
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Gate To Source Voltage Vgs
- 12V
- Fet Type
- N-Channel
- Transistor Element Material
- SILICON
- Fall Time Typ
- 9.8 ns
- Number Of Elements
- 1
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Surface Mount
- Vgsth Max Id
- 1V @ 250μA
- Turn On Delay Time
- 3.5 ns
- Yayın Yılı
- 2012
- Drain Currentmax Abs Id
- 0.76A
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Terminal Pozisyonu
- BOTTOM
- Tepe Reflow Süresi (maks. sn)
- 40
- Genişlik
- 675μm
- Uzunluk
- 1.08mm
- Turn Off Delay Time
- 19.6 ns
- JESD-609 Kodu
- e4
- Kurşunsuz
- Lead Free
- Rds On Max Id Vgs
- 990m Ω @ 100mA, 4.5V
- Drive Voltage Max Rds On Min Rds On
- 1.5V 4.5V
- Parça Durumu
- Active
- Montaj Tipi
- Surface Mount
- Tepe Reflow Sıcaklığı (°C)
- 260
- Gate Charge Qg Max Vgs
- 0.93nC @ 10V
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Fabrika Tedarik Süresi
- 15 Weeks
- Ds Breakdown Voltagemin
- 20V
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