Volume pricing
- 1+ pcs$0.84
- 10+ pcs$0.79
- 100+ pcs$0.75
- 500+ pcs$0.70
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Weight
- 850.995985mg
- Number Of Elements
- 1
- Continuous Drain Current Id
- 12A
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 2555pF @ 10V
- Pulsed Drain Currentmax Idm
- 42A
- Number Of Channels
- 1
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 8
- Montaj
- Surface Mount
- Power Dissipation
- 2W
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2008
- Vgsth Max Id
- 1.2V @ 250μA
- Current Continuous Drain Id25
- 12A Ta
- Uzunluk
- 4.6mm
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- ROHS3 Compliant
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- 40
- Terminal Pozisyonu
- DUAL
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Genişlik
- 4.25mm
- Drain To Source Breakdown Voltage
- 20V
- Ambalaj
- Tape & Reel (TR)
- Reach Svhc
- No SVHC
- JESD-609 Kodu
- e3
- Vgs Max
- ±12V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Parça Durumu
- Obsolete
- Montaj Tipi
- Surface Mount
- Yükseklik
- 560μm
- Additional Feature
- LOW THRESHOLD
- Power Dissipation Max
- 2W Ta
- Rds On Max Id Vgs
- 8m Ω @ 12A, 10V
- Drive Voltage Max Rds On Min Rds On
- 2.5V 10V
- Radyasyon Dayanımı
- No
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Tepe Reflow Sıcaklığı (°C)
- 260
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