Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2012
- Drain Currentmax Abs Id
- 0.2A
- Turn On Delay Time
- 4.06 ns
- Vgsth Max Id
- 900mV @ 100μA
- Montaj
- Surface Mount
- Power Dissipation
- 200mW
- Uzunluk
- 1mm
- Genişlik
- 600μm
- Transistor Application
- SWITCHING
- Tepe Reflow Süresi (maks. sn)
- 40
- ECCN Kodu
- EAR99
- Terminal Pozisyonu
- BOTTOM
- Number Of Elements
- 1
- Transistor Element Material
- SILICON
- Contact Plating
- Gold
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Radyasyon Dayanımı
- No
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 10V
- Reach Svhc
- No SVHC
- Ambalaj
- Tape & Reel (TR)
- Kılıf / Paket
- 3-XFDFN
- Vgs Max
- ±10V
- Yükseklik
- 350μm
- Power Dissipation Max
- 400mW Ta
- Additional Feature
- HIGH RELIABILITY
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Direnç
- 1.5Ohm
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 200mA Ta
- Drain To Source Breakdown Voltage
- 20V
- Operating Mode
- ENHANCEMENT MODE
- Element Configuration
- Single
- Case Connection
- DRAIN
- Continuous Drain Current Id
- 200mA
- Number Of Channels
- 1
- Input Capacitance Ciss Max Vds
- 41pF @ 3V
- Pin Sayısı
- 3
- Tepe Reflow Sıcaklığı (°C)
- 260
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