DMN15H310SE-13

Specifications

Power Dissipation Max

1.9W Ta

Rds On Max Id Vgs

310m Ω @ 1.5A, 10V

Drive Voltage Max Rds On Min Rds On

5V 10V

Montaj Tipi

Surface Mount

Parça Durumu

Active

REACH Uyumluluk Kodu

not_compliant

Kılıf / Paket

TO-261-4, TO-261AA

Vgs Max

±20V

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

8.7nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)

Terminal Formu

GULL WING

Fet Type

N-Channel

Terminal Sayısı

4

Avalanche Energy Rating Eas

1.45 mJ

Fabrika Tedarik Süresi

22 Weeks

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.31Ohm

Input Capacitance Ciss Max Vds

405pF @ 25V

Pulsed Drain Currentmax Idm

10A

Transistor Element Material

SILICON

Continuous Drain Current Id

7.1A

Case Connection

DRAIN

Number Of Elements

1

Ds Breakdown Voltagemin

150V

Drain To Source Voltage Vdss

150V

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G4

Current Continuous Drain Id25

2A Ta 7.1A Tc

Vgsth Max Id

3V @ 250μA

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2015