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DMN10H220LE-13

Diodes Incorporated

DMN10H220LE-13

Single MOSFETs Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.55
  • 10+ pcs$0.52
  • 100+ pcs$0.49
  • 500+ pcs$0.46

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Verified sourcing

RoHS

Compliant

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Specifications

Montaj
Surface Mount
Turn On Delay Time
6.8 ns
Vgsth Max Id
2.5V @ 250μA
Çalışma Sıcaklığı
-55°C~150°C TJ
Yayın Yılı
2014
Current Continuous Drain Id25
2.3A Ta
RoHS Durumu
ROHS3 Compliant
Jesd30 Code
R-PDSO-G4
Transistor Application
SWITCHING
Operating Mode
ENHANCEMENT MODE
ECCN Kodu
EAR99
Terminal Pozisyonu
DUAL
Drain To Source Voltage Vdss
100V
Ds Breakdown Voltagemin
100V
Transistor Element Material
SILICON
Continuous Drain Current Id
2.3A
Case Connection
DRAIN
Fall Time Typ
3.6 ns
Number Of Elements
1
Input Capacitance Ciss Max Vds
401pF @ 25V
Pulsed Drain Currentmax Idm
8A
Nem Hassasiyeti (MSL)
1 (Unlimited)
Drainsource On Resistancemax
0.22Ohm
Rise Time
8.2ns
Configuration
SINGLE WITH BUILT-IN DIODE
Terminal Sayısı
4
Reference Standard
AEC-Q101
Fabrika Tedarik Süresi
22 Weeks
Temel Parça No
DMN10H22
Terminal Formu
GULL WING
Fet Type
N-Channel
Terminal Kaplaması
Matte Tin (Sn)
Gate Charge Qg Max Vgs
8.3nC @ 10V
Gate To Source Voltage Vgs
20V
Pin Sayısı
3
Ambalaj
Cut Tape (CT)
JESD-609 Kodu
e3
Turn Off Delay Time
7.9 ns
Vgs Max
±20V
Kılıf / Paket
TO-261-4, TO-261AA

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