DMN10H170SK3-13

Specifications

Transistor Element Material

SILICON

Continuous Drain Current Id

12A

Fall Time Typ

12.8 ns

Case Connection

DRAIN

Number Of Elements

1

Element Configuration

Single

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

11.1ns

Number Of Channels

1

Input Capacitance Ciss Max Vds

1167pF @ 25V

Vgsth Max Id

3V @ 250μA

Turn On Delay Time

10.5 ns

Yayın Yılı

2013

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation

42W

Montaj

Surface Mount

Drain To Source Breakdown Voltage

100V

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSSO-G2

Current Continuous Drain Id25

12A Tc

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn Off Delay Time

42.6 ns

Vgs Max

±20V

JESD-609 Kodu

e3

Reach Svhc

No SVHC

Ambalaj

Digi-Reel®

Power Dissipation Max

42W Tc

Rds On Max Id Vgs

140m Ω @ 5A, 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Additional Feature

HIGH RELIABILITY

Kurşunsuz

Lead Free

Montaj Tipi

Surface Mount

Parça Durumu

Active

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Gate Charge Qg Max Vgs

9.7nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)