DMN1008UFDF-13

Specifications

Transistor Element Material

SILICON

Case Connection

DRAIN

Number Of Elements

1

Ds Breakdown Voltagemin

12V

Input Capacitance Ciss Max Vds

995pF @ 6V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.0125Ohm

Vgsth Max Id

1V @ 250μA

Drain Currentmax Abs Id

12.2A

Yayın Yılı

2017

Çalışma Sıcaklığı

-55°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

S-PDSO-N6

Current Continuous Drain Id25

12.2A Ta

Drain To Source Voltage Vdss

12V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e4

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

6-UDFN Exposed Pad

Vgs Max

±8V

Montaj Tipi

Surface Mount

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Rds On Max Id Vgs

8m Ω @ 5A, 4.5V

Power Dissipation Max

700mW Ta

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Formu

NO LEAD

Fet Type

N-Channel

Terminal Sayısı

6

Fabrika Tedarik Süresi

18 Weeks

Seri

Automotive, AEC-Q101

Yüzey Montaj

YES

Gate Charge Qg Max Vgs

23.4nC @ 8V

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)