DMG8880LSS-13

Specifications

Rds On Max Id Vgs

10m Ω @ 11.6A, 10V

Kurşunsuz

Lead Free

Fet Type

N-Channel

Pin Sayısı

8

Terminal Sayısı

8

RoHS Durumu

ROHS3 Compliant

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

11.6A

Fall Time Typ

19.67 ns

Kurşunsuz Kodu

yes

Tepe Reflow Sıcaklığı (°C)

260

Number Of Elements

1

Parça Durumu

Obsolete

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

27.6nC @ 10V

Tepe Reflow Süresi (maks. sn)

40

Pin Sayısı

8

Vgsth Max Id

2V @ 250μA

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

20V

Weight

73.992255mg

Ambalaj

Cut Tape (CT)

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Montaj Tipi

Surface Mount

Transistor Element Material

SILICON

Additional Feature

HIGH RELIABILITY

Terminal Formu

GULL WING

Turn Off Delay Time

36.13 ns

Drain To Source Breakdown Voltage

30V

Transistor Application

SWITCHING

Element Configuration

Single

Rise Time

17.52ns

Current Continuous Drain Id25

11.6A Ta

Power Dissipation Max

1.43W Ta

Terminal Kaplaması

Matte Tin (Sn)

Terminal Pozisyonu

DUAL

Number Of Channels

1

Reach Svhc

No SVHC