Volume pricing
- 1+ pcs$0.39
- 10+ pcs$0.37
- 100+ pcs$0.35
- 500+ pcs$0.33
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kurşunsuz Kodu
- yes
- Parça Durumu
- Obsolete
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate Charge Qg Max Vgs
- 58nC @ 10V
- Rds On Max Id Vgs
- 11m Ω @ 12A, 20V
- Kurşunsuz
- Lead Free
- Fet Type
- P-Channel
- Operating Mode
- ENHANCEMENT MODE
- Yükseklik
- 850μm
- Vgsth Max Id
- 3V @ 250μA
- Element Configuration
- Single
- Rise Time
- 15.4ns
- Power Dissipation Max
- 940mW Ta
- Terminal Pozisyonu
- DUAL
- Number Of Channels
- 1
- Kılıf / Paket
- 8-PowerVDFN
- Contact Plating
- Gold
- Genişlik
- 3.35mm
- Turn Off Delay Time
- 38 ns
- Additional Feature
- HIGH RELIABILITY
- Transistor Element Material
- SILICON
- Uzunluk
- 3.35mm
- Yayın Yılı
- 2012
- Vgs Max
- ±25V
- Input Capacitance Ciss Max Vds
- 2987pF @ 15V
- ECCN Kodu
- EAR99
- Jesd30 Code
- S-PDSO-N5
- Fall Time Typ
- 22 ns
- Tepe Reflow Sıcaklığı (°C)
- 260
- Number Of Elements
- 1
- Terminal Sayısı
- 5
- RoHS Durumu
- ROHS3 Compliant
- Drive Voltage Max Rds On Min Rds On
- 4.5V 20V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 9.8A
- Gate To Source Voltage Vgs
- 25V
- Weight
- 72.007789mg
- Drain To Source Voltage Vdss
- 30V
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Süresi (maks. sn)
- 40
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