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Support
Technical team support
Specifications
- ECCN Kodu
- EAR99
- Ds Breakdown Voltagemin
- 30V
- Yayın Yılı
- 2011
- Vgs Max
- ±12V
- Input Capacitance Ciss Max Vds
- 1849pF @ 15V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Transistor Element Material
- SILICON
- Additional Feature
- HIGH RELIABILITY
- Turn Off Delay Time
- 36.41 ns
- Rise Time
- 8.73ns
- Terminal Pozisyonu
- DUAL
- Power Dissipation Max
- 1.54W Ta
- Vgsth Max Id
- 2.3V @ 250μA
- Operating Mode
- ENHANCEMENT MODE
- Qualification Status
- Not Qualified
- Fet Type
- N-Channel
- Pin Sayısı
- 8
- Rds On Max Id Vgs
- 15m Ω @ 10.7A, 10V
- Fet Feature
- Schottky Diode (Body)
- Kurşunsuz Kodu
- yes
- Gate Charge Qg Max Vgs
- 18.5nC @ 10V
- Parça Durumu
- Obsolete
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drain Currentmax Abs Id
- 8A
- JESD-609 Kodu
- e3
- Montaj
- Surface Mount
- Fabrika Tedarik Süresi
- 7 Weeks
- Turn On Delay Time
- 6.62 ns
- Montaj Tipi
- Surface Mount
- Terminal Formu
- GULL WING
- Transistor Application
- SWITCHING
- Reach Svhc
- No SVHC
- Pulsed Drain Currentmax Idm
- 45A
- Terminal Kaplaması
- Matte Tin (Sn)
- Current Continuous Drain Id25
- 8A Ta
- Pin Sayısı
- 8
- Tepe Reflow Süresi (maks. sn)
- 40
- Drainsource On Resistancemax
- 0.015Ohm
- Gate To Source Voltage Vgs
- 12V
- Ambalaj
- Tape & Reel (TR)
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