Volume pricing
- 1+ pcs$0.21
- 10+ pcs$0.20
- 100+ pcs$0.19
- 500+ pcs$0.18
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Breakdown Voltage
- 50V
- Maks. Çalışma Sıcaklığı
- 150°C
- Max Power Dissipation
- 150mW
- Hfemin
- 68
- Akım Değeri
- 100mA
- Uzunluk
- 1.6mm
- Resistor Base R1
- 10 k Ω
- Voltage Rated Dc
- 50V
- Yayın Yılı
- 2006
- Transistor Type
- NPN - Pre-Biased
- RoHS Durumu
- ROHS3 Compliant
- Polarity
- NPN
- Min. Çalışma Sıcaklığı
- -55°C
- Kurşunsuz Kodu
- yes
- Weight
- 2.012816mg
- Additional Feature
- BUILT-IN BIAS RESISTOR RATIO IS 4.7
- Current Collector Cutoff Max
- 500nA
- HTS Kodu
- 8541.21.00.75
- Tepe Reflow Sıcaklığı (°C)
- 260
- Temel Parça No
- DDTC114
- Genişlik
- 800μm
- Continuous Collector Current
- 100mA
- Dc Current Gain Hfe Min Ic Vce
- 68 @ 5mA 5V
- Resistor Emitter Base R2
- 47 k Ω
- Collector Emitter Voltage Vceo
- 300mV
- Fabrika Tedarik Süresi
- 15 Weeks
- Number Of Elements
- 1
- Transition Frequency
- 250MHz
- Contact Plating
- Tin
- Collectoremitter Breakdown Voltage
- 50V
- Pin Sayısı
- 3
- Yükseklik
- 750μm
- Element Configuration
- Single
- Terminal Pozisyonu
- DUAL
- Vce Saturation Max Ib Ic
- 300mV @ 250μA, 5mA
- JESD-609 Kodu
- e3
- Tepe Reflow Süresi (maks. sn)
- 40
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Radyasyon Dayanımı
- No
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