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DDTA114GE-7-F

Diodes Incorporated

DDTA114GE-7-F

Pre-Biased BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Max Power Dissipation
150mW
HTS Kodu
8541.21.00.75
Parça Durumu
Active
Transition Frequency
250MHz
ECCN Kodu
EAR99
Hfemin
30
Frequency Transition
250MHz
RoHS Durumu
ROHS3 Compliant
Element Configuration
Single
Montaj Tipi
Surface Mount
Terminal Kaplaması
Matte Tin (Sn)
Additional Feature
BUILT IN BIAS RESISTOR
Collectoremitter Breakdown Voltage
50V
Transistor Type
PNP - Pre-Biased
Kılıf / Paket
SOT-523
Nem Hassasiyeti (MSL)
1 (Unlimited)
Tepe Reflow Sıcaklığı (°C)
260
Temel Parça No
DDTA114
Yayın Yılı
2007
Fabrika Tedarik Süresi
18 Weeks
Weight
2.012816mg
Montaj
Surface Mount
JESD-609 Kodu
e3
Continuous Collector Current
100mA
Terminal Sayısı
3
Kurşunsuz Kodu
yes
Yükseklik
750μm
Uzunluk
1.6mm
Pin Sayısı
3
Pin Sayısı
3
Qualification Status
Not Qualified
Dc Current Gain Hfe Min Ic Vce
30 @ 5mA 5V
Ambalaj
Tape & Reel (TR)
Max Collector Current
100mA
Terminal Pozisyonu
DUAL
Current Collector Cutoff Max
500nA ICBO
Terminal Formu
GULL WING
Maks. Çalışma Sıcaklığı
150°C
Collector Emitter Voltage Vceo
50V
Min. Çalışma Sıcaklığı
-55°C

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