Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kurşunsuz
- Lead Free
- Fabrika Tedarik Süresi
- 19 Weeks
- Parça Durumu
- Active
- Dc Current Gain Hfe Min Ic Vce
- 56 @ 5mA 5V
- Max Collector Current
- 100mA
- Ambalaj
- Tape & Reel (TR)
- Collector Emitter Voltage Vceo
- 50V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Resistor Base R1
- 22k Ω
- Montaj Tipi
- Surface Mount
- Uzunluk
- 2.2mm
- Transition Frequency
- 250MHz
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 10mA
- Collectoremitter Breakdown Voltage
- 50V
- RoHS Durumu
- ROHS3 Compliant
- Current Collector Cutoff Max
- 500nA
- Genişlik
- 1.35mm
- Frequency Transition
- 250MHz
- Number Of Elements
- 2
- Max Power Dissipation
- 200mW
- ECCN Kodu
- EAR99
- Resistor Emitter Base R2
- 22k Ω
- Maks. Çalışma Sıcaklığı
- 150°C
- Radyasyon Dayanımı
- No
- Min. Çalışma Sıcaklığı
- -55°C
- Continuous Collector Current
- 100mA
- Montaj
- Surface Mount
- Weight
- 6.010099mg
- Hfemin
- 100
- Polarity
- NPN, PNP
- Voltage Rated Dc
- 50V
- Pin Sayısı
- 6
- Pin Sayısı
- 6
- Terminal Kaplaması
- Matte Tin (Sn)
- Additional Feature
- BUILT IN RESISTOR RATIO IS 1
- Akım Değeri
- 100mA
- Tepe Reflow Süresi (maks. sn)
- 40
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Max Output Current
- 30mA
- JESD-609 Kodu
- e3
Related Products
Aptina
EMD4DXV6T1G
BJT Transistors Arrays
Aptina
MUN5111DW1T1G
BJT Transistors Arrays
Aptina
MUN5114DW1T1G
BJT Transistors Arrays
Aptina
MUN5116DW1T1G
BJT Transistors Arrays
Aptina
MUN5211DW1T1G
BJT Transistors Arrays
Aptina
MUN5213DW1T1G
BJT Transistors Arrays
Aptina
MUN5214DW1T1G
BJT Transistors Arrays
Aptina
MUN5232DW1T1G
BJT Transistors Arrays