Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Collector Current
- 100mA
- Dc Current Gain Hfe Min Ic Vce
- 68 @ 10mA 5V
- Tepe Reflow Süresi (maks. sn)
- 40
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Emitter Voltage Vceo
- 300mV
- Ambalaj
- Tape & Reel (TR)
- Continuous Collector Current
- 100mA
- Parça Durumu
- Active
- Weight
- 3.005049mg
- Fabrika Tedarik Süresi
- 19 Weeks
- Montaj
- Surface Mount
- Polarity
- NPN, PNP
- Hfemin
- 68
- Additional Feature
- BUILT-IN BIAS RESISTOR RATIO 4.7
- Terminal Kaplaması
- Matte Tin (Sn)
- Pin Sayısı
- 6
- Pin Sayısı
- 6
- Frequency Transition
- 250MHz
- REACH Uyumluluk Kodu
- not_compliant
- Number Of Elements
- 2
- Max Power Dissipation
- 150mW
- Genişlik
- 1.2mm
- Current Collector Cutoff Max
- 500nA
- Kılıf / Paket
- SOT-563, SOT-666
- RoHS Durumu
- ROHS3 Compliant
- Temel Parça No
- DCX114
- Terminal Formu
- FLAT
- ECCN Kodu
- EAR99
- Resistor Emitter Base R2
- 47k Ω
- Maks. Çalışma Sıcaklığı
- 150°C
- Number Of Channels
- 2
- Qualification Status
- Not Qualified
- Max Breakdown Voltage
- 50V
- Min. Çalışma Sıcaklığı
- -55°C
- Yükseklik
- 600μm
- Kurşunsuz Kodu
- yes
- Yayın Yılı
- 2007
- Montaj Tipi
- Surface Mount
- Resistor Base R1
- 10k Ω
Related Products
Aptina
EMD4DXV6T1G
BJT Transistors Arrays
Aptina
MUN5111DW1T1G
BJT Transistors Arrays
Aptina
MUN5114DW1T1G
BJT Transistors Arrays
Aptina
MUN5116DW1T1G
BJT Transistors Arrays
Aptina
MUN5211DW1T1G
BJT Transistors Arrays
Aptina
MUN5213DW1T1G
BJT Transistors Arrays
Aptina
MUN5214DW1T1G
BJT Transistors Arrays
Aptina
MUN5232DW1T1G
BJT Transistors Arrays