Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Transistor Application
- SWITCHING
- Fabrika Tedarik Süresi
- 16 Weeks
- Uzunluk
- 3mm
- Element Configuration
- Single
- Vgsth Max Id
- 4.5V @ 250μA
- Contact Plating
- Tin
- Yayın Yılı
- 2013
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Süresi (maks. sn)
- 40
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Type
- N-Channel
- Transistor Element Material
- SILICON
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Current Continuous Drain Id25
- 50mA Ta
- Continuous Drain Current Id
- 70mA
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 1
- Genişlik
- 1.4mm
- Input Capacitance Ciss Max Vds
- 21.8pF @ 25V
- Terminal Pozisyonu
- DUAL
- Yükseklik
- 1.1mm
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 3
- Rise Time
- 7.2ns
- Kurşunsuz Kodu
- yes
- Kurşunsuz
- Lead Free
- Power Dissipation Max
- 610mW Ta
- Pin Sayısı
- 3
- Reach Svhc
- No SVHC
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Vgs Max
- ±20V
- Power Dissipation
- 1.25W
- RoHS Durumu
- ROHS3 Compliant
- Drain Currentmax Abs Id
- 0.07A
- Gate To Source Voltage Vgs
- 20V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 1.08nC @ 10V
- Rds On Max Id Vgs
- 160 Ω @ 16mA, 10V
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