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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Element Configuration
- Single
- Uzunluk
- 2.9mm
- Vgsth Max Id
- 2V @ 1mA
- Yayın Yılı
- 2012
- Contact Plating
- Tin
- Transistor Application
- SWITCHING
- JESD-609 Kodu
- e3
- Max Junction Temperature Tj
- 150°C
- Fabrika Tedarik Süresi
- 17 Weeks
- Nominal Vgs
- 2.2 V
- Fet Type
- N-Channel
- Tepe Reflow Süresi (maks. sn)
- 40
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Element Material
- SILICON
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Sıcaklığı (°C)
- 260
- Continuous Drain Current Id
- 170mA
- Current Continuous Drain Id25
- 170mA Ta
- Akım Değeri
- 170mA
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Voltage Rated Dc
- 100V
- Input Capacitance Ciss Max Vds
- 20pF @ 25V
- Terminal Pozisyonu
- DUAL
- Genişlik
- 1.3mm
- Yükseklik
- 1.1mm
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 1
- Feedback Capmax Crss
- 4 pF
- Rise Time
- 10ns
- Terminal Sayısı
- 3
- ECCN Kodu
- EAR99
- Threshold Voltage
- 1.4V
- Vgs Max
- ±20V
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Reach Svhc
- No SVHC
- Power Dissipation
- 300mW
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Kurşunsuz Kodu
- yes
- Power Dissipation Max
- 360mW Ta
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