BSN20-7

Specifications

Terminal Pozisyonu

DUAL

Drain To Source Breakdown Voltage

50V

Power Dissipation Max

600mW Ta

Number Of Elements

1

Pin Sayısı

3

Kurşunsuz

Lead Free

Fall Time Typ

8.3 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Rds On Max Id Vgs

1.8 Ω @ 220mA, 10V

Element Configuration

Single

Transistor Application

SWITCHING

Max Junction Temperature Tj

150°C

Turn On Delay Time

2.93 ns

Gate Charge Qg Max Vgs

0.8nC @ 10V

Continuous Drain Current Id

500mA

Yükseklik

1.1mm

Input Capacitance Ciss Max Vds

40pF @ 10V

Number Of Channels

1

Reach Svhc

No SVHC

Kurşunsuz Kodu

yes

Radyasyon Dayanımı

No

Power Dissipation

600mW

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Montaj Tipi

Surface Mount

Additional Feature

HIGH RELIABILITY

Pin Sayısı

3

Current Continuous Drain Id25

500mA Ta

Rise Time

2.99ns

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

40

Contact Plating

Tin

Transistor Element Material

SILICON

Drain Currentmax Abs Id

0.5A

Terminal Sayısı

3

Parça Durumu

Active

Uzunluk

3mm

Vgsth Max Id

1.5V @ 250μA

Genişlik

1.4mm

Weight

7.994566mg