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Same-day dispatch from stock
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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Genişlik
- 2.41mm
- Akım Değeri
- -230mA
- Fet Type
- P-Channel
- Number Of Elements
- 1
- Power Dissipation
- 700mW
- Drive Voltage Max Rds On Min Rds On
- 10V
- Element Configuration
- Single
- Uzunluk
- 4.77mm
- Tepe Reflow Sıcaklığı (°C)
- 260
- Current Continuous Drain Id25
- 230mA Ta
- Weight
- 453.59237mg
- Input Capacitance Ciss Max Vds
- 60pF @ 10V
- Terminal Pozisyonu
- BOTTOM
- Fabrika Tedarik Süresi
- 17 Weeks
- Direnç
- 14Ohm
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2006
- Contact Plating
- Tin
- Terminal Formu
- WIRE
- Power Dissipation Max
- 700mW Ta
- Rds On Max Id Vgs
- 14 Ω @ 200mA, 10V
- Vgsth Max Id
- 3.5V @ 1mA
- Kurşunsuz Kodu
- yes
- Number Of Channels
- 1
- Gate To Source Voltage Vgs
- 20V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj
- Through Hole
- Reach Svhc
- No SVHC
- Operating Mode
- ENHANCEMENT MODE
- JESD-609 Kodu
- e3
- Voltage Rated Dc
- -45V
- Pin Sayısı
- 3
- Ambalaj
- Bulk
- ECCN Kodu
- EAR99
- Pin Sayısı
- 3
- Tepe Reflow Süresi (maks. sn)
- 40
- Vgs Max
- ±20V
- Parça Durumu
- Active
- Jedec95 Code
- TO-92
- Montaj Tipi
- Through Hole
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