Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Base Voltage Vcbo
- 50V
- Power Dissipation
- 250mW
- Collectoremitter Breakdown Voltage
- 45V
- Terminal Pozisyonu
- BOTTOM
- Yükseklik
- 1.5mm
- Collectoremitter Saturation Voltage
- 650mV
- Radyasyon Dayanımı
- No
- Additional Feature
- HIGH RELIABILITY
- Transistor Element Material
- SILICON
- Uzunluk
- 1mm
- Temel Parça No
- BC857BLP
- Gain Bandwidth Product
- 200MHz
- Current Collector Cutoff Max
- 15nA ICBO
- Max Breakdown Voltage
- 45V
- Frekans
- 100MHz
- Voltage Rated Dc
- -50V
- Akım Değeri
- -100mA
- Yayın Yılı
- 2011
- Kılıf / Paket
- 3-UFDFN
- Parça Durumu
- Active
- JESD-609 Kodu
- e4
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Sıcaklığı (°C)
- 260
- Number Of Elements
- 1
- Transistor Type
- PNP
- Kurşunsuz
- Lead Free
- Emitter Base Voltage Vebo
- 5V
- Max Power Dissipation
- 250mW
- ECCN Kodu
- EAR99
- Contact Plating
- Gold
- Reach Svhc
- No SVHC
- Vce Saturation Max Ib Ic
- 650mV @ 5mA, 100mA
- Fabrika Tedarik Süresi
- 19 Weeks
- Max Collector Current
- 100mA
- Kurşunsuz Kodu
- yes
- Hfemin
- 220
- Element Configuration
- Single
- Polaritychannel Type
- PNP
- Transition Frequency
- 100MHz
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