Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation
- 350mW
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Base Voltage Vcbo
- 80V
- Contact Plating
- Tin
- Collectoremitter Breakdown Voltage
- 65V
- ECCN Kodu
- EAR99
- Max Power Dissipation
- 350mW
- Emitter Base Voltage Vebo
- 5V
- Additional Feature
- HIGH RELIABILITY
- Collectoremitter Saturation Voltage
- -650mV
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- DUAL
- Terminal Formu
- GULL WING
- Kurşunsuz Kodu
- yes
- Transistor Application
- SWITCHING
- Current Collector Cutoff Max
- 15μA ICBO
- Power Max
- 310mW
- Temel Parça No
- BC856B
- Fabrika Tedarik Süresi
- 19 Weeks
- Vce Saturation Max Ib Ic
- 650mV @ 5mA, 100mA
- Reach Svhc
- No SVHC
- Gain Bandwidth Product
- 200MHz
- Max Collector Current
- 100mA
- Frekans
- 200MHz
- Transition Frequency
- 200MHz
- Polaritychannel Type
- PNP
- RoHS Durumu
- ROHS3 Compliant
- Hfemin
- 220
- Element Configuration
- Single
- Terminal Sayısı
- 3
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Pin Sayısı
- 3
- Yayın Yılı
- 2005
- Continuous Collector Current
- -100mA
- Number Of Elements
- 1
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transistor Type
- PNP
- Collector Emitter Voltage Vceo
- 65V
- JESD-609 Kodu
- e3
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