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APT13005T-G1

Diodes Incorporated

APT13005T-G1

Single BJT Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Çalışma Sıcaklığı
-65°C~150°C TJ
Dc Current Gain Hfe Min Ic Vce
8 @ 2A 5V
Collector Emitter Voltage Vceo
900mV
Pin Sayısı
3
Transistor Type
NPN
RoHS Durumu
ROHS3 Compliant
Contact Plating
Tin
Montaj
Through Hole
Min. Çalışma Sıcaklığı
-65°C
Montaj Tipi
Through Hole
Element Configuration
Single
Collectoremitter Breakdown Voltage
450V
Emitter Base Voltage Vebo
9V
Power Max
75W
Uzunluk
10.2mm
Tedarikçi Cihaz Paketi
TO-220AB
Fabrika Tedarik Süresi
20 Weeks
Maks. Çalışma Sıcaklığı
150°C
Vce Saturation Max Ib Ic
900mV @ 1A, 4A
Voltage Collector Emitter Breakdown Max
450V
Collectoremitter Saturation Voltage
900mV
Max Power Dissipation
75W
Yükseklik
16.1mm
Yayın Yılı
2012
Currentcollector Ic Max
4A
Genişlik
4.5mm
Kılıf / Paket
TO-220-3
Parça Durumu
Active
Max Collector Current
4A
Frequency Transition
4MHz
Ambalaj
Tube
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collector Base Voltage Vcbo
10V

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