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APT13003SZTR-G1

Diodes Incorporated

APT13003SZTR-G1

Single BJT Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Voltage Collector Emitter Breakdown Max
450V
Collectoremitter Saturation Voltage
600mV
Max Power Dissipation
1.1W
Vce Saturation Max Ib Ic
1.2V @ 250mA, 1A
Yayın Yılı
2016
Currentcollector Ic Max
1.3A
Yükseklik
4.7mm
Max Collector Current
1.3A
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Genişlik
3.7mm
Parça Durumu
Active
Ambalaj
Tape & Box (TB)
Nem Hassasiyeti (MSL)
1 (Unlimited)
Frequency Transition
4MHz
Çalışma Sıcaklığı
-65°C~150°C TJ
Collector Emitter Voltage Vceo
1.2V
Dc Current Gain Hfe Min Ic Vce
5 @ 1A 2V
Montaj Tipi
Through Hole
Element Configuration
Single
Montaj
Through Hole
Min. Çalışma Sıcaklığı
-65°C
Transistor Type
NPN
RoHS Durumu
ROHS3 Compliant
Contact Plating
Tin
Pin Sayısı
3
Maks. Çalışma Sıcaklığı
150°C
Uzunluk
4.7mm
Tedarikçi Cihaz Paketi
TO-92
Fabrika Tedarik Süresi
15 Weeks
Power Max
1.1W
Emitter Base Voltage Vebo
9V
Collectoremitter Breakdown Voltage
450V

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