
Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Jesd30 Code
- R-PDSO-G3
- Transistor Element Material
- SILICON
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Formu
- GULL WING
- Resistor Base R1
- 4.7 k Ω
- Additional Feature
- HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10
- Yüzey Montaj
- YES
- Terminal Pozisyonu
- DUAL
- Voltage Collector Emitter Breakdown Max
- 50V
- Seri
- Automotive, AEC-Q101
- Transition Frequency
- 250MHz
- Ambalaj
- Tape & Reel (TR)
- Montaj Tipi
- Surface Mount
- Parça Durumu
- Active
- Transistor Type
- NPN - Pre-Biased
- Currentcollector Ic Max
- 100mA
- Vce Saturation Max Ib Ic
- 300mV @ 250μA, 5mA
- RoHS Durumu
- ROHS3 Compliant
- Power Max
- 330mW
- Resistor Emitter Base R2
- 47 k Ω
- Kılıf / Paket
- SC-70, SOT-323
- Polaritychannel Type
- NPN
- Current Collector Cutoff Max
- 500nA
- Terminal Sayısı
- 3
- Terminal Kaplaması
- Matte Tin (Sn)
- Fabrika Tedarik Süresi
- 13 Weeks
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 10mA 5V
- Frequency Transition
- 250MHz
- Configuration
- SINGLE WITH BUILT-IN RESISTOR
- Number Of Elements
- 1
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
Related Products
AMI Semiconductor
DTC124XM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA115EET1G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA115TM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA123JM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA124EM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA143ZM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA144WET1G
Pre-Biased BJT Transistors
AMI Semiconductor
DTC123TM3T5G
Pre-Biased BJT Transistors

