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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 10mA
- Currentcollector Ic Max
- 100 mA
- Transistor Type
- NPN - Pre-Biased
- Montaj Tipi
- Surface Mount
- Ambalaj
- Cut Tape
- Resistor Emitter Base R2
- 4.7 kOhms
- Pd Power Dissipation
- 310 mW
- Power Max
- 310 mW
- Current Collector Cutoff Max
- 500nA
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Ürün Durumu
- Active
- Dc Collectorbase Gain Hfe Min
- 20
- Collector Emitter Voltage Vceo Max
- 50 V
- Configuration
- Single
- RoHS
- Details
- Channel Mode
- Enhancement
- Frequency Transition
- 250 MHz
- Montaj Stili
- SMD/SMT
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 10mA, 5V
- Maximum Operating Frequency
- 250 MHz
- Continuous Collector Current
- 100 mA
- Maks. Çalışma Sıcaklığı
- + 150 C
- Tedarikçi Cihaz Paketi
- SOT-23-3
- Ürün Tipi
- BJTs - Bipolar Transistors - Pre-Biased
- Fabrika Paket Adedi
- 10000
- Output Voltage
- 0.1 V
- Voltage Collector Emitter Breakdown Max
- 50 V
- Birim Ağırlık
- 0.000282 oz
- Resistor Base R1
- 4.7 kOhms
- Qualification
- AEC-Q101
- Minimum Operating Temperature
- - 55 C
- Transistor Polarity
- NPN
- Seri
- Automotive, AEC-Q101
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