Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 2
- Frequency Transition
- 250MHz
- Terminal Kaplaması
- Matte Tin (Sn)
- Ambalaj
- Tape & Reel (TR)
- Power Max
- 270mW
- Current Collector Cutoff Max
- 500nA
- Resistor Base R1
- 4.7k Ω
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Vce Saturation Max Ib Ic
- 300mV @ 250μA, 5mA
- Jesd30 Code
- R-PDSO-G6
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Fabrika Tedarik Süresi
- 13 Weeks
- Voltage Collector Emitter Breakdown Max
- 50V
- JESD-609 Kodu
- e3
- Parça Durumu
- Active
- Polaritychannel Type
- NPN
- Terminal Formu
- GULL WING
- Transition Frequency
- 250MHz
- Seri
- Automotive, AEC-Q101
- Yüzey Montaj
- YES
- RoHS Durumu
- ROHS3 Compliant
- Transistor Type
- 2 NPN - Pre-Biased (Dual)
- Currentcollector Ic Max
- 100mA
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 10mA 5V
- Resistor Emitter Base R2
- 47k Ω
- Additional Feature
- HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10
- Terminal Sayısı
- 6
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Montaj Tipi
- Surface Mount
- ECCN Kodu
- EAR99
Related Products
Aptina
EMD4DXV6T1G
BJT Transistors Arrays
Aptina
MUN5111DW1T1G
BJT Transistors Arrays
Aptina
MUN5114DW1T1G
BJT Transistors Arrays
Aptina
MUN5116DW1T1G
BJT Transistors Arrays
Aptina
MUN5211DW1T1G
BJT Transistors Arrays
Aptina
MUN5213DW1T1G
BJT Transistors Arrays
Aptina
MUN5214DW1T1G
BJT Transistors Arrays
Aptina
MUN5232DW1T1G
BJT Transistors Arrays