Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transition Frequency
- 250MHz
- Frequency Transition
- 250MHz
- Ambalaj
- Tape & Reel (TR)
- Transistor Element Material
- SILICON
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Terminal Formu
- GULL WING
- Resistor Emitter Base R2
- 10k Ω
- Seri
- Automotive, AEC-Q101
- ECCN Kodu
- EAR99
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 5mA 5V
- Parça Durumu
- Active
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 10mA
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Montaj Tipi
- Surface Mount
- Currentcollector Ic Max
- 100mA
- Resistor Base R1
- 10k Ω
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Fabrika Tedarik Süresi
- 13 Weeks
- Polaritychannel Type
- NPN
- Additional Feature
- HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 1
- JESD-609 Kodu
- e3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 2
- Power Max
- 270mW
- Transistor Type
- 2 NPN - Pre-Biased (Dual)
- Voltage Collector Emitter Breakdown Max
- 50V
- Terminal Sayısı
- 6
- Yüzey Montaj
- YES
- RoHS Durumu
- ROHS3 Compliant
- Terminal Kaplaması
- Matte Tin (Sn)
- Current Collector Cutoff Max
- 500nA
- Jesd30 Code
- R-PDSO-G6
Related Products
Aptina
EMD4DXV6T1G
BJT Transistors Arrays
Aptina
MUN5111DW1T1G
BJT Transistors Arrays
Aptina
MUN5114DW1T1G
BJT Transistors Arrays
Aptina
MUN5116DW1T1G
BJT Transistors Arrays
Aptina
MUN5211DW1T1G
BJT Transistors Arrays
Aptina
MUN5213DW1T1G
BJT Transistors Arrays
Aptina
MUN5214DW1T1G
BJT Transistors Arrays
Aptina
MUN5232DW1T1G
BJT Transistors Arrays