2N7002Q-7-F

Specifications

Fet Type

N-Channel

Rise Time

3ns

Configuration

SINGLE WITH BUILT-IN DIODE

Current Continuous Drain Id25

170mA Ta

Transistor Application

SWITCHING

Number Of Elements

1

Yayın Yılı

2009

Turn On Delay Time

2.8 ns

Tepe Reflow Sıcaklığı (°C)

260

Seri

Automotive, AEC-Q101

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

40

Reach Svhc

No SVHC

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

0.233nC @ 10V

RoHS Durumu

ROHS3 Compliant

Terminal Formu

GULL WING

Terminal Kaplaması

Matte Tin (Sn)

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

60V

Fabrika Tedarik Süresi

14 Weeks

Power Dissipation

540mW

Parça Durumu

Active

Drain To Source Voltage Vdss

60V

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Vgsth Max Id

2.5V @ 250μA

Feedback Capmax Crss

5 pF

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

5V 10V

Drainsource On Resistancemax

5Ohm

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

5 Ω @ 500mA, 10V

Turn Off Delay Time

7.6 ns

Power Dissipation Max

370mW Ta

ECCN Kodu

EAR99

Transistor Element Material

SILICON