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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Voltage Vdss
- 60V
- Drive Voltage Max Rds On Min Rds On
- 5V
- Input Capacitance Ciss Max Vds
- 26pF @ 25V
- Additional Feature
- HIGH RELIABILITY
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Gate Charge Qg Max Vgs
- 0.35nC @ 4.5V
- Fabrika Tedarik Süresi
- 14 Weeks
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Terminal Formu
- GULL WING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Type
- N-Channel
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- Ambalaj
- Tape & Reel (TR)
- HTS Kodu
- 8541.21.00.95
- Ds Breakdown Voltagemin
- 60V
- JESD-609 Kodu
- e3
- Manufacturer Package Identifier
- 2N7002H-7
- Terminal Sayısı
- 3
- Kurşunsuz Kodu
- yes
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Number Of Elements
- 1
- Parça Durumu
- Active
- Power Dissipation Max
- 370mW Ta
- Reference Standard
- AEC-Q101
- Yayın Yılı
- 2013
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 170mA
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Drain Currentmax Abs Id
- 0.17A
- Vgs Max
- ±20V
- RoHS Durumu
- ROHS3 Compliant
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Surface Mount
- Current Continuous Drain Id25
- 170mA Ta
- Vgsth Max Id
- 3V @ 250μA
- Jesd30 Code
- R-PDSO-G3
- Terminal Pozisyonu
- DUAL
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