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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 1
- Collector Emitter Voltage Vceo
- 25V
- Collectoremitter Breakdown Voltage
- 25V
- Max Collector Current
- 2A
- Gain Bandwidth Product
- 300MHz
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Kaplaması
- Matte Tin (Sn)
- Vce Saturation Max Ib Ic
- 400mV @ 75mA, 1.5A
- Max Breakdown Voltage
- 25V
- Tepe Reflow Süresi (maks. sn)
- 40
- Current Collector Cutoff Max
- 100nA ICBO
- Genişlik
- 2.5mm
- Yükseklik
- 1.5mm
- Frekans
- 300MHz
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 3
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 100mA 2V
- Transistor Type
- NPN
- Collector Base Voltage Vcbo
- 30V
- ECCN Kodu
- EAR99
- Power Dissipation
- 1W
- Kılıf / Paket
- TO-243AA
- Temel Parça No
- 2DD1621
- Uzunluk
- 4.5mm
- Weight
- 51.993025mg
- Ambalaj
- Tape & Reel (TR)
- Element Configuration
- Single
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2008
- JESD-609 Kodu
- e3
- Kurşunsuz Kodu
- yes
- Reach Svhc
- No SVHC
- Pin Sayısı
- 4
- Fabrika Tedarik Süresi
- 19 Weeks
- Max Power Dissipation
- 1W
- Case Connection
- COLLECTOR
- Jesd30 Code
- R-PSSO-F3
- Terminal Formu
- FLAT
- Polaritychannel Type
- NPN
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