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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Frekans
- 200MHz
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Dc Current Gain Hfe Min Ic Vce
- 270 @ 200mA 2V
- Transistor Type
- PNP
- ECCN Kodu
- EAR99
- Collector Base Voltage Vcbo
- 30V
- Power Dissipation
- 2W
- Kurşunsuz
- Lead Free
- Kılıf / Paket
- TO-243AA
- Vce Saturation Max Ib Ic
- 370mV @ 75mA, 1.5A
- Max Breakdown Voltage
- 30V
- Tepe Reflow Süresi (maks. sn)
- 40
- Current Collector Cutoff Max
- 100nA ICBO
- Genişlik
- 2.5mm
- Yükseklik
- 1.4mm
- Number Of Elements
- 1
- Collectoremitter Breakdown Voltage
- 30V
- Collector Emitter Voltage Vceo
- 30V
- Max Collector Current
- 2A
- Gain Bandwidth Product
- 200MHz
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Kaplaması
- Matte Tin (Sn)
- Radyasyon Dayanımı
- No
- Collectoremitter Saturation Voltage
- -370mV
- Montaj
- Surface Mount
- Emitter Base Voltage Vebo
- 6V
- Montaj Tipi
- Surface Mount
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Formu
- FLAT
- Polaritychannel Type
- PNP
- Parça Durumu
- Active
- RoHS Durumu
- ROHS3 Compliant
- Transition Frequency
- 200MHz
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2008
- JESD-609 Kodu
- e3
- Kurşunsuz Kodu
- yes
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