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2DB1386Q-13

Diodes Incorporated

2DB1386Q-13

Single BJT Transistors

RoHS: Compliant

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Specifications

Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj Tipi
Surface Mount
Pin Sayısı
4
Emitter Base Voltage Vebo
6V
Montaj
Surface Mount
Radyasyon Dayanımı
No
Transition Frequency
100MHz
RoHS Durumu
ROHS3 Compliant
Polaritychannel Type
PNP
Parça Durumu
Active
Terminal Formu
FLAT
Case Connection
COLLECTOR
Max Power Dissipation
1W
Fabrika Tedarik Süresi
13 Weeks
Pin Sayısı
4
Reach Svhc
No SVHC
Kurşunsuz Kodu
yes
JESD-609 Kodu
e3
Yayın Yılı
2011
Transistor Application
SWITCHING
Tepe Reflow Sıcaklığı (°C)
260
Element Configuration
Single
Ambalaj
Tape & Reel (TR)
Weight
51.993025mg
Uzunluk
4.5mm
Hfemin
120
Temel Parça No
2DB1386
Kılıf / Paket
TO-243AA
Power Dissipation
1W
ECCN Kodu
EAR99
Collector Base Voltage Vcbo
30V
Transistor Type
PNP
Dc Current Gain Hfe Min Ic Vce
120 @ 500mA 2V
Terminal Sayısı
4
Transistor Element Material
SILICON
Frekans
100MHz
Yükseklik
1.5mm
Genişlik
2.48mm
Current Collector Cutoff Max
500nA ICBO
Max Breakdown Voltage
20V

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