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Specifications
- Genişlik
- 2.5mm
- Yükseklik
- 1.5mm
- Vce Saturation Max Ib Ic
- 350mV @ 50mA, 1A
- Tepe Reflow Süresi (maks. sn)
- 40
- Max Breakdown Voltage
- 50V
- Current Collector Cutoff Max
- 100nA ICBO
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gain Bandwidth Product
- 160MHz
- Terminal Kaplaması
- Matte Tin (Sn)
- Number Of Elements
- 1
- Collector Emitter Voltage Vceo
- 50V
- Collectoremitter Breakdown Voltage
- 50V
- Max Collector Current
- 3A
- Collector Base Voltage Vcbo
- 50V
- ECCN Kodu
- EAR99
- Power Dissipation
- 2W
- Kılıf / Paket
- TO-243AA
- Kurşunsuz
- Lead Free
- Terminal
- SMD/SMT
- Temel Parça No
- 2DA1797
- Frekans
- 160MHz
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Dc Current Gain Hfe Min Ic Vce
- 82 @ 500mA 2V
- Transistor Type
- PNP
- JESD-609 Kodu
- e3
- Yayın Yılı
- 2008
- Kurşunsuz Kodu
- yes
- Fabrika Tedarik Süresi
- 13 Weeks
- Reach Svhc
- No SVHC
- Pin Sayısı
- 4
- Jesd30 Code
- R-PSSO-F3
- Max Power Dissipation
- 2W
- Case Connection
- COLLECTOR
- Transistor Application
- SWITCHING
- Tepe Reflow Sıcaklığı (°C)
- 260
- Weight
- 51.993025mg
- Ambalaj
- Tape & Reel (TR)
- Power Max
- 900mW
- Element Configuration
- Single
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