Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Max
- 200mW
- Direnç
- 786.574 Ohms
- Voltage Collector Emitter Breakdown Max
- 50V
- Çalışma Sıcaklığı
- -55°C ~ 125°C
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Currentcollector Ic Max
- 100mA
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 10mA, 5V
- Paket
- Bulk
- Vce Saturation Max Ib Ic
- 300mV @ 250µA, 5mA
- Terminal Sayısı
- 2
- Temperature Coefficient
- ±2ppm/°C
- Güç (Watt)
- 0.6W
- Composition
- Metal Foil
- Boyut / Ölçü
- 0.300 L x 0.105 W (7.62mm x 2.67mm)
- Temel Ürün No
- DCX123
- Ürün Durumu
- Active
- Resistor Base R1
- 2.2kOhms
- Montaj Tipi
- Surface Mount
- Maks. Oturma Yüksekliği
- 0.336 (8.53mm)
- Ürün Tipi
- BJTs - Bipolar Transistors - Pre-Biased
- Seri
- Z
- Kılıf / Paket
- Radial
- Current Collector Cutoff Max
- 500nA (ICBO)
- Frequency Transition
- 250MHz
- Tolerans
- ±0.1%
- Resistor Emitter Base R2
- 47kOhms
- Fabrika Paket Adedi
- 3000
- Özellikler
- Moisture Resistant, Non-Inductive
Related Products
AMI Semiconductor
DTC124XM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA115EET1G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA115TM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA123JM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA124EM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA143ZM3T5G
Pre-Biased BJT Transistors
AMI Semiconductor
DTA144WET1G
Pre-Biased BJT Transistors
AMI Semiconductor
DTC123TM3T5G
Pre-Biased BJT Transistors

