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Specifications
- Vgs Th Gatesource Threshold Voltage
- - 3 V
- Pd Power Dissipation
- 32 W
- Vds Drainsource Breakdown Voltage
- 150 V
- Output Power
- 40.6 W
- Gain
- 28.1 dB
- Transistor Type
- HEMT
- Id Continuous Drain Current
- 4.6 A
- Operating Frequency
- 2.7 GHz to 3.5 GHz
- Ambalaj
- Cut Tape
- Fabrika Paket Adedi
- 50
- Transistor Polarity
- N-Channel
- Kılıf / Paket
- QFN-32
- Vgs Gatesource Breakdown Voltage
- - 10 V, 2 V
- Moisture Sensitive
- Yes
- Maks. Çalışma Sıcaklığı
- + 225 C
- RoHS
- Details
- Montaj Stili
- SMD/SMT
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