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SS8050-G

Comchip Technology

SS8050-G

Single BJT Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Fabrika Tedarik Süresi
10 Weeks
Transistor Type
NPN
RoHS Durumu
ROHS3 Compliant
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Yayın Yılı
2016
Parça Durumu
Active
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collector Emitter Voltage Vceo
400mV
Terminal Formu
GULL WING
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Transistor Element Material
SILICON
Transition Frequency
100MHz
Terminal Pozisyonu
DUAL
Çalışma Sıcaklığı
150°C TJ
Number Of Elements
1
Ambalaj
Tape & Reel (TR)
Terminal Sayısı
3
Max Collector Current
1.5A
Polaritychannel Type
NPN
Jesd30 Code
R-PDSO-G3
Montaj
Surface Mount
Max Breakdown Voltage
25V
Current Collector Cutoff Max
100nA ICBO
Frequency Transition
100MHz
Dc Current Gain Hfe Min Ic Vce
100 @ 10mA 1V
Kurşunsuz Kodu
yes
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Vce Saturation Max Ib Ic
400mV @ 5mA, 50mA
Max Power Dissipation
300mW
Power Max
300mW
Collectoremitter Breakdown Voltage
25V
Montaj Tipi
Surface Mount
Configuration
SINGLE

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