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MMBTA44-G

Comchip Technology

MMBTA44-G

Single BJT Transistors

RoHS: Compliant

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Specifications

Nem Hassasiyeti (MSL)
1 (Unlimited)
Jesd30 Code
R-PDSO-G3
Collectoremitter Breakdown Voltage
400V
Terminal Sayısı
3
Parça Durumu
Active
RoHS Durumu
ROHS3 Compliant
Transistor Element Material
SILICON
Max Power Dissipation
350mW
Configuration
SINGLE
Ambalaj
Tape & Reel (TR)
Terminal Pozisyonu
DUAL
Çalışma Sıcaklığı
150°C TJ
Montaj
Surface Mount
Terminal Formu
GULL WING
Fabrika Tedarik Süresi
10 Weeks
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Number Of Elements
1
Montaj Tipi
Surface Mount
Max Collector Current
200mA
Current Collector Cutoff Max
100nA ICBO
Collector Emitter Voltage Vceo
750mV
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Kurşunsuz Kodu
yes
Yayın Yılı
2014
Polaritychannel Type
NPN
Transistor Type
NPN
Power Max
350mW
Dc Current Gain Hfe Min Ic Vce
50 @ 10mA 10V
Vce Saturation Max Ib Ic
750mV @ 5mA, 50mA
Max Breakdown Voltage
400V
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED

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