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Comchip Technology

MMBT2222A-HF

Single BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Collector Emitter Voltage Vceo Max
40 V
Turnoff Timemax Toff
285 ns
Power Max
300 mW
Collectoremitter Saturation Voltage
300 mV
Ihs Manufacturer
COMCHIP TECHNOLOGY CO LTD
Ürün Durumu
Active
Dc Current Gain Hfe Min Ic Vce
100 @ 150mA, 10V
Risk Rank
5.58
Reflow Temperaturemax S
NOT SPECIFIED
Yüzey Montaj
YES
Montaj Stili
SMD/SMT
Package Style
SMALL OUTLINE
Fabrika Paket Adedi
3000
Emitter Base Voltage Vebo
6 V
Terminal Formu
GULL WING
Dc Current Gain Hfe Max
300
Part Life Cycle Code
Active
Çalışma Sıcaklığı
150°C (TJ)
Package Description
SMALL OUTLINE, R-PDSO-G3
Temel Ürün No
MMBT2222
Currentcollector Ic Max
600 mA
Vce Saturation Max Ib Ic
300mV @ 15mA, 150mA
Maks. Çalışma Sıcaklığı
+ 150 C
Dc Collectorbase Gain Hfe Min
100
Tedarikçi Cihaz Paketi
SOT-23-3
Dc Current Gainmin Hfe
42
Pd Power Dissipation
300 mW
Gain Bandwidth Product Ft
300 MHz
Üretici Parça No
MMBT2222A-HF
Turnon Timemax Ton
35 ns
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Collector Base Voltage Vcbo
75 V
Configuration
Single
Voltage Collector Emitter Breakdown Max
40 V
Collectoremitter Voltagemax
40 V
Montaj Tipi
Surface Mount
Frequency Transition
300MHz
Transistor Element Material
SILICON
RoHS
In Transition
Transition Frequencynom Ft
300 MHz

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