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2N3906-G

Comchip Technology

2N3906-G

Single BJT Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Terminal Pozisyonu
BOTTOM
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emitter Base Voltage Vebo
-5V
Collectoremitter Saturation Voltage
-400mV
Çalışma Sıcaklığı
-55°C~150°C TJ
Montaj
Through Hole
Polaritychannel Type
PNP
Yayın Yılı
2012
Transistor Type
PNP
Transistor Application
SWITCHING
RoHS Durumu
ROHS3 Compliant
Collector Emitter Voltage Vceo
400mV
Turn Off Timemax Toff
300ns
Number Of Elements
1
Turn On Timemax Ton
70ns
Max Collector Current
200mA
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Frequency Transition
250MHz
Collectoremitter Breakdown Voltage
40V
Jesd30 Code
O-PBCY-T3
Transition Frequency
250MHz
Dc Current Gain Hfe Min Ic Vce
30 @ 100mA 1V
Vce Saturation Max Ib Ic
400mV @ 5mA, 50mA
Transistor Element Material
SILICON
Fabrika Tedarik Süresi
10 Weeks
Collector Base Voltage Vcbo
-40V
Element Configuration
Single
Current Collector Cutoff Max
100nA ICBO
Montaj Tipi
Through Hole
Terminal Sayısı
3
Parça Durumu
Active
Ambalaj
Bag

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